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AO6405 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free (meets ROHS & Sony 259 specifications). AO6405L is a Green Product ordering option. AO6405 and AO6405L are electrically identical.
Features
VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52m (VGS = -10V) RDS(ON) < 87m (VGS = -4.5V)
D TSOP6 Top View D D G 16 25 34 D D S
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 20 -5 -4.2 -20 2 1.4 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 47.5 74 37
Max 62.5 110 50
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6405
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A 6 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=5.0A TJ=125C -1 -20 39 54 67 8.6 -0.77 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 VGS=-10V, VDS=-15V, RL=3, RGEN=3 IF=-5A, dI/dt=100A/s IF=-5A, dI/dt=100A/s
2
Min -30
Typ
Max
Units V
-1 -5 100 -1.8 -3 52 70 87
A nA V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
840
15 18 9.5
nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
5 29 14 23.5 13.4 30
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: May 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 -10V 15 -4V -ID (A) 10 -ID(A) 6 4 2 0 5.00 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics -6V 10 -5V -4.5V 8 VDS=-5V
-3.5V VGS=-3V
125C 25C
5
0 0.00
-2.5V 1.00 2.00 3.00 4.00
-VDS (Volts) Figure 1: On-Region Characteristics
100 Normalized On-Resistance
1.60E+00 VGS=-4.5V 1.40E+00 VGS=-10V
80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 40
1.20E+00
1.00E+00
ID=-5A
20 1 3 5 7 9 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
8.00E-01 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
160 140 120 RDS(ON) (m) 100 80 60 40 25C 125C -IS (A) ID=-5A
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20
2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=-15V ID=-5A Capacitance (pF) 1000 800 600 400 Coss 200 0 0 Crss 5 10 15 20 25 30
Ciss
-VDS (Volts) Figure 8: Capacitance Characteristics
100
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s 100s 1ms 10ms Power (W) 30
TJ(Max)=150C TA=25C
-ID (Amps)
10
20
1 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
T
Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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